KSP2222
KSP2222
General Purpose Transistor
鈥?Collector-Emitter Voltage: V
CEO
= 30V
鈥?Collector Dissipation: P
C
(max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
60
30
5
600
625
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
Parameter
Collector-Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Test Condition
I
C
=10碌A, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10碌A, I
C
=0
V
CB
=50V, I
E
=0
V
CE
=10V, I
C
=0.1mA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, *I
C
=150mA
V
CE
=10V, *I
C
=500mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=20V, I
C
=20mA
f=100MHz
V
CC
=30V, V
BE(off)
=0.5V
I
C
=150mA, I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
250
35
285
35
50
75
100
30
Min.
60
30
5
10
Typ.
Max.
Units
V
V
V
nA
300
0.4
1.6
1.3
2.6
8
V
V
V
V
pF
MHz
ns
ns
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
OFF
* Collector-Emitter Saturation Voltage
* Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Turn Off Time
* Pulse Test: Pulse Width鈮?00碌s, Duty Cycle鈮?%
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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