KSH47/50
KSH47/50
High Voltage and High Reliability
D-PAK for Surface Mount Applications
鈥?Lead Formed for Surface Mount Application (No Suffix)
鈥?Straight Lead (I-PAK, 鈥? I鈥?Suffix)
鈥?Electrically Similar to Popular TIP47 and TIP50
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Emitter Voltage
: KSH47
: KSH50
Collector-Emitter Voltage
: KSH47
: KSH50
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
T
J
T
STG
Junction Temperature
Storage Temperature
Value
350
500
250
400
5
1
2
0.6
15
1.56
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
W
W
擄C
擄C
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: KSH47
: KSH50
Collector Cut-off Current
: KSH47
: KSH50
I
CES
Collector Cut-off Current
: KSH47
: KSH50
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V
CE
= 350, V
EB
= 0
V
CE
= 500, V
EB
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 10V, I
C
= 0.3A
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 0.2A
V
CE
= 10A, I
C
= 1A
V
CE
=10V, I
C
= 0.2A
10
30
10
0.1
0.1
1
150
1
1.5
V
V
MHz
mA
mA
mA
V
CE
= 150V, I
B
= 0
V
CE
= 300V, I
B
= 0
0.2
0.2
mA
mA
Test Condition
I
C
= 30mA, I
B
= 0
Min.
250
400
Max.
Units
V
V
I
CEO
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002