鈥?/div>
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, 鈥? I鈥?Suffix)
Electrically Similar to Popular KSE45H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
- 80
-5
-8
- 16
20
1.75
150
- 55 ~ 150
Units
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Capacitance
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= - 30mA, I
B
= 0
V
CE
= - 80V, I
B
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 1V, I
C
= - 4A
I
C
= - 8A, I
B
= - 0.4A
I
C
= - 8A, I
B
= - 0.8A
V
CE
= - 10A, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
I
C
= - 5A
I
B1
= - I
B2
= - 0.5A
40
230
135
500
100
60
40
-1
- 1.5
V
V
MHz
pF
ns
ns
ns
Min.
- 80
Typ.
Max.
- 10
- 50
Units
V
碌A(chǔ)
碌A(chǔ)
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002