鈥?/div>
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, 鈥? I鈥?Suffix)
Electrically Similar to Popular KSE44H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector-Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
80
5
8
16
20
1.75
150
- 65 ~ 150
Units
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 30mA, I
B
= 0
V
CE
= 80V, I
B
= 0
V
BE
= 5V, I
C
= 0
V
CE
= 1V, I
C
= 2A
V
CE
= 1V, I
C
= 4A
I
C
= 8A, I
B
= 0.4A
I
C
= 8A, I
B
= 0.8A
V
CE
= 10V, I
C
= 0.5A
V
CB
=10V, f = 1MHz
I
C
= 5A
I
B1
= - I
B2
= 0.5A
50
130
300
500
140
60
40
1
1.5
V
V
MHz
pF
ns
ns
ns
Min.
80
Typ.
Max.
10
50
Units
V
碌A(chǔ)
碌A(chǔ)
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. A3, October 2002