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KSH42C

KSH42C

General Purpose Amplifier

Low Speed Switching Applications

鈥?Lead Formed for Surface Mount Application (No Suffix)

鈥?Straight Lead (I-PAK, 鈥? I鈥?Suffix)

鈥?Electrically Similar to Popular TIP42C

1

D-PAK

1.Base

1

I-PAK

3.Emitter

2.Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

Collector Dissipation (T

C

=25擄C)

Collector Dissipation (T

a

=25擄C)

Junction Temperature

Storage Temperature

Parameter

Value

-100

-100

-5

-6

-10

-2

20

1.75

150

- 65 ~ 150

Units

V

V

V

A

A

A

W

W

擄C

擄C

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

V

CEO

(sus)

I

CEO

I

CES

I

EBO

h

FE

V

CE

(sat)

V

BE

(on)

f

T

Parameter

* Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

* Collector-Emitter Saturation Voltage

* Base-Emitter On Voltage

Current Gain Bandwidth Product

Test Condition

I

C

= - 30mA, I

B

= 0

V

CE

= -60V, I

B

= 0

V

CE

= -100V, V

BE

= 0

V

BE

= -5V, I

C

= 0

V

CE

= -4V, I

C

= -0.3A

V

CE

= -4V, I

C

= -3A

I

C

= -6A, I

B

= -600mA

V

CE

= -6A, I

C

= -4A

V

CE

= -10V, I

C

= -500mA

3

30

15

Min.

-100

Max.

-50

-10

-0.5

75

-1.5

-2

V

V

MHz

Units

V

碌A(chǔ)

碌A(chǔ)

mA

* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%

漏2002 Fairchild Semiconductor Corporation

Rev. A4, October 2002

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