KSE2955T
KSE2955T
General Purpose and Switching Applications
鈥?DC Current Gain Specified to I
C
= 10 A
鈥?High Current Gain Bandwidth Product : f
T
= 2MHz (Min.)
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
- 70
- 60
-5
- 10
-6
75
0.6
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
I
CEO
I
CEX1
I
CEX2
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector- Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
Test Condition
I
C
= - 200mA, I
B
= 0
V
CE
= - 30V, I
B
= 0
V
CE
= - 70V, V
BE
(off) = 1.5V
V
CE
= - 70V, V
BE
(off) = 1.5V
@ T
C
= 150擄C
V
EB
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 4A
V
CE
= - 4V, I
C
= - 10A
I
C
= - 4A, I
B
= - 0.4A
I
C
= - 10A, I
B
= - 3.3A
V
CE
= - 4V, I
C
= - 4A
V
CE
= - 10V, I
C
= - 500mA
2
20
5
Min.
-60
Max.
-700
-1
-5
-5
100
-1.1
-8
-1.8
V
V
V
MHz
Units
V
碌A(chǔ)
mA
mA
mA
* Pulse test: PW鈮?00碌s, duty cycle鈮?% Pulse
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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