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KSE701 Datasheet

  • KSE701

  • Monolithic Construction With Built-in Base- Emitter Resistor...

  • 4頁(yè)

  • FAIRCHILD

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KSE700/701/702/703
KSE700/701/702/703
Monolithic Construction With Built-in Base-
Emitter Resistors
鈥?High DC Current Gain : h
FE
= 750 (Min.) @ I
C
= -1.5 and -2.0A DC
鈥?Complement to KSE800/801/802/803
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Sym-
bol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Parameter
Collector- Base Voltage
: KSE700/701
: KSE702/703
Value
- 60
- 80
- 60
- 80
-5
-4
- 0.1
40
150
- 55 ~ 150
Unit
s
V
V
V
V
V
A
A
W
擄C
擄C
R1
R2
E
Equivalent Circuit
C
B
Collector-Emitter Voltage : KSE700/701
: KSE702/703
Emitter- Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
R
1
鈮?/div>
10
k
鈩?/div>
R
2
鈮?/div>
0.6
k
鈩?/div>
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: KSE700/701
: KSE702/703
Collector Cut-off Current
: KSE700/701
: KSE702/703
Collector Cut-off Current
Test Condition
I
C
= - 10mA, I
B
= 0
Min.
-60
-80
-100
-100
-100
-500
-2
750
750
100
-2.5
-2.8
-3
-1.2
-2.5
-3
V
V
V
V
V
V
Rev. A2, June 2001
Max.
Units
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
mA
I
CEO
V
CE
= - 60V, I
B
= 0
V
CE
= - 80V, I
B
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
@T
C
= 100擄C
V
BE
= - 5V, I
C
= 0
V
CE
= - 3V, I
C
= - 1.5A
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 4A
I
C
= - 1.5A, I
B
= - 30mA
I
C
= - 2A, I
B
= - 40mA
I
C
= - 4A, I
B
= - 40mA
V
CE
= - 3V, I
C
= - 1.5A
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 4A
I
CBO
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
: KSE700/702
: KSE701/703
: ALL DEVICES
V
CE
(sat)
Collector-Emitter Saturation Voltage
: KSE700/702
: KSE701/703
: ALL DEVICES
Base-Emitter On Voltage
: KSE700/702
: KSE701/703
: ALL DEVICES
V
BE
(on)
漏2001 Fairchild Semiconductor Corporation

KSE701相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Monolithic Construction With Built-in Base- Emitter Resistor...
    FAIRCHILD
  • 英文版
    Monolithic Construction With Built-in Base- Emitter Resistor...
    FAIRCHILD ...
  • 英文版
    Monolithic Construction With Built-in Base- Emitter Resistor...
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  • 英文版
    Monolithic Construction With Built-in Base- Emitter Resistor...
    FAIRCHILD ...
  • 英文版
    Monolithic Construction With Built-in Base- Emitter Resistor...
    FAIRCHILD
  • 英文版
    Monolithic Construction With Built-in Base- Emitter Resistor...
    FAIRCHILD ...
  • 英文版
    Monolithic Construction With Built-in Base- Emitter Resistor...
    FAIRCHILD
  • 英文版
    Monolithic Construction With Built-in Base- Emitter Resistor...
    FAIRCHILD ...
  • 英文版
    Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, ...
    FAIRCHILD
  • 英文版
    Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, ...
    FAIRCHILD
  • 英文版
    Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, ...
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