KSE5020
KSE5020
Feature
鈥?High Voltage, High Quality High Speed Switching : t
F
=0.1碌s
鈥?WIDE SOA
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
800
500
7
3
6
1
30
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
V
CEX
(sus)
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
S
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, R
BE
=鈭?/div>
I
E
= 1mA, I
C
= 0
I
C
= 1.5A, I
B
1=-I
B
2= 0.6A
L = 2mH, Clamped
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.3A
V
CE
= 5V, I
C
= 1.5A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CB
= 10V, f = 1MHz
V
CE
= 10V, I
C
= 0.3A
V
CC
= 200V
5I
B
1 = -2.5I
B
2=I
C
=2A
RL = 100鈩?/div>
50
18
0.5
3
0.3
15
8
Min.
800
500
7
500
10
10
50
1
1.5
V
V
pF
MHz
碌s
碌s
碌s
Typ.
Max.
Units
V
V
V
V
碌A(chǔ)
碌A(chǔ)
h
FE
Classification
Classification
h
FE1
漏2001 Fairchild Semiconductor Corporation
R
15 ~ 30
O
20 ~ 40
Y
30 ~ 50
Rev. A1, June 2001
1
2
3
4
