KSE44H Series
KSE44H Series
General Purpose Power Switching Applications
鈥?Low Collector-Emitter Saturation Voltage : V
CE
(sat) = 1V (Max.) @ 8A
鈥?Fast Switching Speeds
鈥?Complement to KSE45H
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
Parameter
Collector-Emitter Voltage
: KSE44H 1,2
: KSE44H 4,5
: KSE44H 7,8
: KSE44H 10,11
Emitter- Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Value
30
45
60
80
5
10
20
50
1.67
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
W
擄C
擄C
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CES
I
EBO
h
FE
Parameter
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
: KSE44H 1,4,7,10
: KSE44H 2,5,8,11
*Collector-Emitter Saturation Voltage
: KSE44H 1, 4, 7 10
: KSE44H 2, 5, 8,11
*Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Test Condition
V
CE
= Rated V
CEO
, V
EB
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 1V, I
C
= 2A
35
60
1
1
1.5
50
130
300
500
140
V
V
V
MHz
pF
ns
ns
ns
Min.
Typ.
Max.
10
100
Units
碌A(chǔ)
碌A(chǔ)
V
CE
(sat)
I
C
= 8A, I
B
= 0.8A
I
C
= 8A, I
B
= 0.4A
I
C
= 8A, I
B
= 0.8A
V
CE
= 10V, I
C
= 0.5A
V
CB
= 10V, f = 1MHz
V
CC
=20V, I
C
= 5A
I
B1
= - I
B2
= 0.5A
V
BE
(sat)
f
T
C
ob
t
ON
t
STG
t
F
* Pulse test: PW鈮?00碌s, Duty cycle鈮?%
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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