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KSE350

KSE350

High Voltage General Purpose Applications

鈥?High Collector-Emitter Breakdown Voltage

鈥?Suitable for Transformer

鈥?Complement to KSE340

1

TO-126

2.Collector

3.Base

1. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation (T

C

=25擄C)

Junction Temperature

Storage Temperature

Parameter

Value

- 300

- 300

-5

- 500

20

150

- 65 ~ 150

Units

V

V

V

mA

W

擄C

擄C

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

BV

CEO

I

CBO

I

EBO

h

FE

Parameter

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Test Condition

I

C

= - 1mA, I

B

= 0

V

CB

= - 300V, I

E

= 0

V

BE

= - 3V, I

C

= 0

V

CE

= - 10V, I

C

= - 50mA

30

Min.

-300

Max.

-100

-100

240

Units

V

碌A(chǔ)

碌A(chǔ)

漏2000 Fairchild Semiconductor International

Rev. A, February 2000

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