KSE210
KSE210
Feature
鈥?Low Collector-Emitter Saturation Voltage
鈥?High Current Gain Bandwidth Product : f
T
=65MHz@I
C
= -100mA (Min.)
鈥?Complement to KSE200
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
- 40
- 25
-8
-5
15
150
- 65 ~ 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= - 10mA, I
B
= 0
V
CB
= -40V, I
E
= 0
V
CB
= - 40V, I
E
=0 @ T
J
= 125擄C
V
BE
= - 8V, I
C
= 0
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 5A
I
C
= - 500mA, I
B
= - 50mA
I
C
= - 2A, I
C
= - 200mA
I
C
= - 5A, I
B
= - 1A
I
C
= - 5A, I
B
= - 1A
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 10V, I
C
= - 100mA
V
CB
= - 10V, I
E
= 0, f = 1MHz
65
120
70
45
10
Min.
-25
Max.
-100
-100
-100
180
-0.3
-0.75
-1.8
-2.5
-1.6
V
V
V
V
V
MHz
pF
Units
V
nA
碌A(chǔ)
nA
Collector-Emitter Saturation Voltage
V
BE
(sat)
V
BE
(on)
f
T
C
ob
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
漏2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
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