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KSE200

KSE200

Feature

鈥?Low Collector-Emitter Saturation Voltage

鈥?High Current Gain Bandwidth Product : f

T

=65MHz @ I

C

=100mA (Min.)

鈥?Complement to KSE210

1

TO-126

2.Collector

3.Base

1. Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter- Base Voltage

Collector Current

Collector Dissipation (T

C

=25擄C)

Junction Temperature

Storage Temperature

Parameter

Value

40

25

8

5

15

150

- 65 ~ 150

Units

V

V

V

A

W

擄C

擄C

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

BV

CEO

I

CBO

I

EBO

h

FE

Parameter

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Test Condition

I

C

=10mA, I

B

=0

V

CB

=40V, I

E

=0

V

CB

=40V, I

E

=0 @ T

J

=125擄C

V

BE

=8V, I

C

=0

V

CE

=1V, I

C

=500mA

V

CE

=1V, I

C

=2A

V

CE

=2V, I

C

=5A

I

C

=500mA, I

B

=50mA

I

C

=2A, I

C

=200mA

I

C

=5A, I

B

=1A

I

C

=5A, I

B

=1A

V

CE

=1V, I

C

=2A

V

CE

=10V, I

C

=100mA

V

CB

=10V, I

E

=0, f=0.1MHz

65

80

70

45

10

Min.

25

Max.

100

100

100

180

0.3

0.75

1.8

2.5

1.6

V

V

V

V

V

MHz

pF

Units

V

nA

碌A(chǔ)

nA

V

CE

(sat)

Collector-Emitter Saturation Voltage

V

BE

(sat)

V

BE

(on)

f

T

C

ob

Base- Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

漏2001 Fairchild Semiconductor Corporation

Rev. A1, January 2001

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