KSE180/181/182
KSE180/181/182
Low Power Audio Amplifier
Low Current High Speed Switching Applications
1
TO-126
2.Collector
3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: KSE180
: KSE181
: KSE182
1. Emitter
Value
60
80
100
40
60
80
7
3
6
1
1.5
12.5
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
擄C
擄C
V
CEO
Collector-Emitter Voltage : KSE180
: KSE181
: KSE182
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector -Emitter Breakdown Voltage
: KSE180
: KSE181
: KSE182
Collector Cut-off Current : KSE180
: KSE181
: KSE182
: KSE180
: KSE181
: KSE182
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= 10mA, I
B
= 0
Min.
40
60
80
0.1
0.1
0.1
0.1
0.1
0.1
0.1
50
30
12
250
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
mA
mA
mA
碌A(chǔ)
I
CBO
V
CB
= 60V, I
B
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
V
CB
= 60V, I
E
= 0 @ T
C
= 150擄C
V
CB
= 80V, I
E
= 0 @ T
C
= 150擄C
V
CB
= 100V, I
E
= 0 @ T
C
= 150擄C
V
BE
= 7V, I
C
= 0
V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 500mA
V
CE
= 1V, I
C
= 1.5A
I
C
= 500mA, I
B
= 50mA
I
C
= 1.5A, I
B
= 150mA
I
C
= 3A, I
B
= 600mA
I
C
= 1.5A, I
B
= 150mA
I
C
= 3A, I
B
= 600mA
V
CE
= 1V, I
C
= 500mA
V
CE
= 10V, I
C
= 100mA
V
CB
= 10V, I
E
= 0, f = 0.1MHz
50
I
EBO
h
FE
V
CE
(sat)
Collector-Emitter Saturation Voltage
0.3
0.9
1.7
1.5
2.0
1.2
30
V
V
V
V
V
V
MHz
pF
V
BE
(sat)
V
BE
(on)
f
T
C
ob
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
漏2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
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