KSE170/171/172
KSE170/171/172
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
1
TO-126
2.Collector
3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: KSE170
: KSE171
: KSE172
: KSE170
: KSE171
: KSE172
1. Emitter
Value
- 60
- 80
- 100
- 40
- 60
- 80
-7
-3
-6
-1
12.5
1.5
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
擄C
擄C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breaksown Voltage
: KSE170
: KSE171
: KSE172
Collector Cut-off Current
: KSE170
: KSE171
: KSE172
: KSE170
: KSE171
: KSE172
Test Condition
I
C
= 10mA, I
B
= 0
Min.
-40
-60
-80
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
50
30
12
250
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
mA
mA
mA
碌A(chǔ)
I
CBO
V
CB
= - 60V, I
B
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
V
CB
= - 60V, I
E
= 0, T
C
= 150擄C
V
CB
= - 80V, I
E
= 0, T
C
= 150擄C
V
CB
= - 100V, I
E
= 0, T
C
= 150擄C
V
BE
= - 7V, I
C
= 0
V
CE
= - 1V, I
C
= - 100mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 1.5A
I
C
= - 500mA, I
B
= - 50mA
I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 10V, I
C
= - 100mA
V
CB
= - 10V, I
E
= 0, f = 0.1MHz
50
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
-0.3
-0.9
-1.7
-1.5
-2.0
-1.2
50
V
V
V
V
V
V
MHz
pF
V
BE
(sat)
V
BE
(on)
f
T
C
ob
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
漏2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
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