KSD5707
KSD5707
High Voltage Color Display Horizontal
Deflection Output
鈥?High Collector - Base Voltage : V
CBO
= 1500V
鈥?High Speed Switching t
F
= 0.4碌s (Max.)
1
TO-3PF
2.Collector
3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
1500
800
6
6
16
60
150
- 55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
t
F
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Fall Time
Test Condition
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 3A
I
C
= 4A, I
B
= 0.8A
I
C
= 4A, I
B
= 0.8A
V
CE
= 10V, I
C
= 1A
V
CC
=200V, I
C
=4A,
I
B1
= 0.8A, I
B2
= -1.6A
R
L
=50鈩?/div>
3
0.4
Min.
Typ.
Max.
10
1
10
5
2
30
15
5
1.5
V
V
MHz
碌s
Units
碌A(chǔ)
mA
Thermal Characteristics
Symbol
R
胃jc
Thermal Resistance
Characteristics
Junction to Case
Rating
2.08
Unit
擄C/W
漏2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
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