KSD560
KSD560
Low Frequency Power Amplifier
鈥?Low Speed Switching Industrial Use
鈥?Complement to KSB601
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
150
100
7
5
8
0.5
1.5
30
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
擄C
擄C
* PW鈮?0ms, Duty Cycle鈮?0%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
f
T
Parameter
Collector Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter SaturationVoltage
Turn ON Time
Storage Time
Fall Time
Test Condition
V
CB
= 100V, I
E
= 0
V
CE
= 2V, I
C
= 3A
V
CE
= 2V, I
C
= 5A
I
C
= 3A, I
B
= 3mA
I
C
= 3A, I
B
= 3mA
V
CC
=
鈰?/div>
50V, I
C
= 3A
I
B1
= - I
B2
= 3mA
R
L
= 16.7鈩?/div>
鈰?/div>
Min.
2K
500
Typ.
6K
0.9
1.6
1
3.5
1.2
Max.
1
15K
1.5
2
Units
碌A(chǔ)
V
V
碌s
碌s
碌s
* Pulse Test: PW鈮?50碌s, Duty Cycle鈮?% Pulsed
h
FE
Classification
Classification
h
FE1
R
2000 ~ 5000
O
3000 ~ 7000
Y
5000 ~ 15000
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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