KSD526 NPN Epitaxial Silicon Transistor
April 2006
KSD526
NPN Epitaxial Silicon Transistor
Power Amplifier Applications
鈥?Complement to KSB596
1
TO-220
2.Collector
3.Emitter
1.Base
Absolute Maximum Ratings *
Symbol
V
CBO
V
CEO
V
EBO
I
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
T
a
= 25擄C unless otherwise noted
Parameter
Value
80
80
5
4
0.4
30
150
-55~150
Units
V
V
V
A
A
W
擄C
擄C
I
B
P
C
Base Current
Collector Dissipation ( T
C
=25擄C)
Junction Temperature
Storage Temperature
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Electrical Characteristics
Symbol
I
CBO
I
EBO
BV
CEO
BV
EBO
h
FE
V
CE(
sat
)
V
BE(
on
)
f
T
C
cb
T
C
= 25擄C unless otherwise noted
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
Collector Output Capacitance
Test Condition
V
CB
= 80V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 50mA, I
B
= 0
I
E
= 10mA, I
C
= 0
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.3A
V
CE
= 5V, I
C
= 3A
V
CE
= 5V, I
C
= 0.5A
V
CB
= 10V, I
E
= 0, f = 1MHz
MIN
MAX
MAX
30
100
Units
渭A
渭A
V
V
80
5
40
15
240
50
0.45
1
3
8
90
1.5
1.5
V
V
MHz
pF
h
FE
Classification
Classification
h
FE
R
40鈭?0
O
70鈭?40
Y
120鈭?40
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSD526 Rev. A1