鈥?/div>
High Switching Speed (t
F
. max=0.4碌s)
ABSOLUTE MAXIMUM RATING
Characteristic
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
C
T
J
T
STG
Rating
1500
800
6
3.5
10
50
150
-55 ~ 150
Unit
V
V
V
A
A
W
擄C
擄C
1.Base 2.Collector 3.Emitter
ELECTRICAL CHARACTERISTICS
(T
C
=25擄C)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Damper Diode Turn On Voltage
Fall Time
Symbol
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
V
F
t
F
Test Condition
V
CB
= 800V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 0.5A
I
C
= 2.5A, I
B
= 0.8A
I
C
= 2.5A, I
B
= 0.8A
V
CE
= 10V, I
C
= 0.5A
I
F
= 3.5A
I
C
= 3A, I
B
1 = 0.8A
I
B
2 = - 1.6A, V
CC
= 200V
RL = 66.7鈩?/div>
.
Min
40
8
Typ
Max
10
200
8
1.5
3
2
0.4
Unit
碌A(chǔ)
mA
V
V
MHz
V
碌s
Rev B.
漏
1999 Fairchild Semiconductor Corporation
1
2
