KSD288
KSD288
Power Regulator
Low Frequency High Power Amplifier
鈥?Collector-Base Voltage : V
CBO
=80V
鈥?Collector Dissipation : P
C
=25W(T
C
=25擄C)
TO-220
2.Collector
3.Emitter
1
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
80
55
5
3
25
150
- 55 ~ 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Test Condition
I
C
=500碌A, I
E
=0
I
C
=10mA,I
B
=0
I
E
=500碌A, I
C
=0
V
CB
=50V,I
E
=0
V
CE
=5V,I
C
=0.5A
I
C
=1A, I
B
=0.1A
40
Min.
80
55
5
50
240
1
V
Typ.
Max.
Units
V
V
V
碌A
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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