鈥?/div>
High Dc Durrent Gain
Low Collector Saturation Voltage
Built-in a Damper Diode at E-C
High Power Dissipation : P
C
= 1.3W (Ta=25擄C)
TO-126
2.Collector
3.Base
1
1. Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Sym-
bol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
150
100
8
3
5
1.3
15
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
擄C
* PW鈮?0ms, duty Cycle鈮?0%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
Test Condition
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 1.5A
V
CE
= 2V, I
C
= 3A
I
C
= 1.5A, I
B
= 1.5mA
I
C
= 1.5A, I
B
= 1.5mA
V
CC
= 40V, I
C
= 1.5A
I
B1
= - I
B2
= 1.5mA
R
L
= 27鈩?/div>
2K
1K
0.9
1.5
0.5
2
1
Min.
Typ.
Max.
10
2
20K
1.2
2
V
V
碌s
碌s
碌s
Units
碌A(chǔ)
mA
* Pulse test: PW鈮?50碌s, duty Cycle鈮?% Pulsed
h
FE
Classificntion
Classification
h
FE1
O
2000 ~ 5000
Y
4000 ~ 12000
G
6000 ~ 20000
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
1
2
3
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