KSD1621 NPN Epitaxial Silicon Transistor
July 2005
KSD1621
NPN Epitaxial Silicon Transistor
High Current Driver Applications
鈥?Low Collector-Emitter Saturation Voltage
鈥?Large Current Capacity and Wide SOA
鈥?Fast Switching Speed
鈥?Complement to KSB1121
Marking
1 6
P Y
1
2 1
W W
Weekly code
Year code
h
FE
grage
SOT-89
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
*
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
T
a
= 25擄C unless otherwise noted
Parameter
Ratings
30
25
6
2
500
1.3
150
-55 ~ 150
Units
V
V
V
A
mW
W
擄C
擄C
Collector Power Dissipation
Junction Temperature
Storage Temperature
Mounted on Ceramic Board (250mm
2
x 0.8mm)
Electrical Characteristics
T
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
a
=
25擄C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Test Condition
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 20V, I
E
= 0
V
BE
= 4V, I
C
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1.5A
I
C
= 1.5A, I
B
= 75mA
I
C
= 1.5A, I
B
= 75mA
Min.
30
25
6
Typ.
Max.
Units
V
V
V
100
100
100
65
0.18
0.85
560
0.4
1.2
nA
nA
V
V
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSD1621 Rev. B2