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KSD1417 Datasheet

  • KSD1417

  • High Power Switching Applications

  • 4頁(yè)

  • FAIRCHILD

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KSD1417
KSD1417
High Power Switching Applications
鈥?High DC Current Gain
鈥?Low Collector-Emitter Saturation Voltage
鈥?Complement to KSB1022
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
60
60
5
7
10
0.7
2
30
150
-55 ~ 150
Units
V
V
V
A
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= 50mA, I
B
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 7A
I
C
= 3A, I
B
= 6mA
I
C
= 7A, I
B
= 14mA
I
C
= 3A, I
B
= 6mA
V
CC
= 45V, I
C
= 4.5A
I
B1
= -I
B2
= 6mA
R
L
= 10鈩?/div>
2K
1K
0.9
1.2
1.5
0.8
3
2.5
Min.
60
Typ.
Max.
100
3
15K
1.5
2
2.5
V
V
V
碌s
碌s
碌s
Units
V
碌A(chǔ)
mA
漏2000 Fairchild Semiconductor International
Rev. A, February 2000

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