KSD1406
KSD1406
Low Frequency Power Amplifier
鈥?Low Collector-Emitter Saturation Voltage
鈥?Complement to KSB1015
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
60
60
7
3
0.5
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= 50mA, I
B
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.3A
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 0.5A
V
CB
= 10V, f = 1MHz
V
CC
= 30V, I
C
= 1A
I
B1
= -I
B2
= 0.2A
R
L
= 30鈩?/div>
60
20
0.4
0.7
3
70
0.8
1.5
0.8
Min.
60
Typ.
Max.
100
100
300
1
1
V
V
MHz
pF
碌s
碌s
碌s
Units
V
碌A(chǔ)
碌A(chǔ)
h
FE1
Classification
Classification
h
FE1
O
60 ~ 120
Y
100 ~ 200
G
150 ~ 300
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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