KSD1273
KSD1273
High h
FE
, AF Power Amplifier
鈥?鈥滷ull PAK鈥?Package for Simplified Mounting Only by a Screw, Requires
no Insulator.
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
80
60
6
3
6
1
2
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
f
T
Parameter
Collector-Emitter Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Test Condition
I
C
= 25mA, I
B
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 60V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A
30
500
Min.
60
Typ.
Max.
100
100
100
2500
1
V
MHz
Units
V
碌A
碌A
碌A
h
FE
Classification
Classification
h
FE
Q
500 ~ 1000
P
800 ~ 1500
O
1200 ~ 2500
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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