KSD1047
KSD1047
Audio Power Amplifier
DC to DC Converter
鈥?High Current Capability
鈥?High Power Dissipation
鈥?Complement to KSB817
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
160
140
6
8
16
80
150
- 40 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
t
F
t
STG
* Pulse test: PW=20碌s
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Fall Time
Storage Time
Test Condition
I
C
= 5mA, I
E
= 0
I
C
= 10mA, R
BE
=鈭?/div>
I
E
= 5mA, I
C
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 6A
I
C
= 5A, I
B
= 0.5A
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 1A
V
CB
= 10V, f = 1MHz
V
CC
= 20V
I
C
= 1A = 10I
B1
= -10I
B2
R
L
= 20鈩?/div>
Min.
160
140
6
Typ.
Max.
Units
V
V
V
0.1
0.1
60
20
2.5
1.5
15
210
0.26
0.68
6.88
200
mA
mA
V
V
MHz
pF
碌s
碌s
碌s
* h
FE
Classificntion
Classification
h
FE1
O
60 ~ 120
Y
100 ~ 200
漏2000 Fairchild Semiconductor International
Rev. B, November 2000
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