鈥?/div>
High Breakdown Voltage : BV
CBO
=1500V
High Speed Switching : t
F
=0.1碌s (Typ.)
Wide S.O.A
For C-Monitor (48KHz) & C-TV (~21鈥?
B
Equivalent Circuit
C
1
50鈩?typ.
E
TO-3PF
2.Collector
3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
1500
800
6
8
16
50
150
- 55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CES
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
V
F
t
F
Parameter
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Damper Diode Turn On Voltage
Fall Time
Test Condition
V
CE
= 1400V, V
BE
= 0
V
CB
= 800V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 5V, I
C
= 1.0A
V
CE
= 5V, I
C
= 5.0A
I
C
= 5A, I
B
= 1.2A
I
C
= 5A, I
B
= 1.2A
I
F
= 6A
V
CC
= 200V, I
C
= 4A
I
B1
= 0.8A, I
B2
= -1.6A
R
L
= 50鈩?/div>
40
10
4
Min.
Typ.
Max.
1
10
250
30
7
5
1.5
2
0.2
V
V
V
碌s
Units
V
mA
mA
hermal Characteristics
T
C
=25擄C
unless otherwise noted
Symbol
R
胃jC
Item
Thermal Resistance, Junction to Case
Max
2.5
Unit
擄C/W
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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