KSC5405
KSC5405
High Voltage Power Switch Switching
Applications
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Collector Dissipation ( T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
1000
450
9
5
10
2
4
100
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
*Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage:
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 100mA, I
B
= 0
V
CE
= 1000V, V
BE
= 0
V
BE
= 9V, I
C
= 0
V
CE
=5V, I
C
=0.6A
I
C
= 2.5A, I
B
= 0.5A
I
C
= 2.5A, I
B
= 0.5A
V
CC
= 250V, I
C
= 2.5A
I
B1
= -I
B2
= 0.5A
R
L
=100鈩?/div>
10
Min.
450
Typ.
Max.
1
10
40
1.5
1.3
1
4
0.8
V
V
Units
V
mA
mA
碌
s
碌
s
碌
s
* Pulsed Test: PW = 300uS, duty cycle = 1.5%
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
next