KSC5345
KSC5345
High Voltage and High Reliability
鈥?High speed Switching
鈥?Wide Safe Operating Area
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
900
450
14
5
10
2
4
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
A
W
擄C
擄C
* Pulse Test: Pulse Width = 5ms, Duty Cycle鈮?0%
Thermal Characteristics
T
C
=25擄C unless otherwise noted
Symbol
R
胃jc
R
胃ja
Thermal Resistance
Characteristics
Junction to Case
Junction to Ambient
Rating
1.25
62.5
Unit
擄C/W
漏2001 Fairchild Semiconductor Corporation
Rev. A, October 2001