KSC5338
KSC5338
High Voltage Power Switch Switching
Application
鈥?High Speed Switching
鈥?Wide SOA
TO-220
2.Collector
3.Emitter
1
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
1000
450
9
5
10
2
4
100
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
C
ib
f
T
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
=0
I
C
=1mA, I
E
=0
V
CB
= 800V, V
BE
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 0.5A
V
CE
= 1V, I
C
= 2A
I
C
= 1A, I
B
= 0.1A
I
C
= 2A, I
B
= 0.4A
I
C
= 1A, I
B
= 0.1A
I
C
= 2A, I
B
= 0.4A
V
CB
= 10V, f =1MHz
V
EB
=8V, I
C
=0, f =1MHz
V
EB
= 6V, I
C
= 0.1A
V
CC
= 125V, I
C
= 1A
I
B1
= 0.2A, I
B2
= - 0.2A
R
L
=125鈩?/div>
70
1000
14
200
2
500
15
6
0.55
Min.
1000
450
9
10
10
30
0.8
0.5
1.1
1.25
V
V
V
V
pF
pF
MHz
ns
碌s
ns
Typ.
Max.
Units
V
V
V
碌A
碌A
* Pulse Test : Pulse Width=5ms, Duty Cycle鈮?0%
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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