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KSC5321F

KSC5321F

High Voltage and High Reliability

鈥?High speed Switching

鈥?Wide Safe Operating Area

1

TO-220F

2.Collector

3.Emitter

1.Base

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

I

BP

P

C

T

J

T

STG

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current (DC)

*Base Current (Pulse)

Power Dissipation(Tc=25)

Junction Temperature

Storage Temperature

Value

800

500

7

5

10

2

4

40

150

- 55 ~ 150

Units

V

V

V

A

A

A

A

W

擄C

擄C

* Pulse Test: Pulse Width=5ms, Duty Cycle鈮?0%

Thermal Characteristics

T

C

=25擄C unless otherwise noted

Symbol

R

胃jc

R

胃ja

Thermal Resistance

Characteristics

Junction to Case

Junction to Ambient

Rating

3.1

62.5

Unit

擄C/W

漏2002 Fairchild Semiconductor Corporation

Rev. B, December 2002

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