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KSC5302DI Datasheet

  • KSC5302DI

  • High Voltage & High Speed Power Switch Application

  • 99.66KB

  • 6頁(yè)

  • FAIRCHILD

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KSC5302DI
KSC5302DI
High Voltage & High Speed
Power Switch Application
鈥?Built-in Free-wheeling Diode makes efficient anti saturation operation
Suitable for half-bridge light ballast Applications
鈥?No need to interest an h
FE
value because of low variable storage-time
spread even though corner spirit
鈥?Low base drive requirement
B
Equivalent Circuit
C
1
E
I-PAK
1. Base 2. Collector 3. Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
800
400
12
2
5
1
2
25
150
- 55 ~ 150
Units
V
V
V
A
A
A
A
W
擄C
擄C
Thermal Characteristics
T
C
=25擄C unless otherwise noted
Symbol
R
胃jc
R
胃ja
Thermal Resistance
Characteristics
Junction to Case
Junction to Ambient
Rating
5.0
83.3
Unit
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002

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