KSC5088
KSC5088
High Definition Color Display Horizontal
Deflection Output
鈥?High Collector -Base Voltage : V
CBO
=1500V
鈥?High Speed Switching: t
F
= 0.1碌s (Typ.)
1
TO-3PF
2.Collector
3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
1500
800
6
8
15
4
50
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
t
STG
t
F
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current-Gain Bandwidth Product
Storage Time
Fall Time
Test Condition
V
CB
=800V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
=5V, I
C
= 1A
V
CE
=5V, I
C
= 6A
I
C
= 6A , I
B
= 1.5A
I
C
= 6A , I
B
= 1.5A
V
CE
= 10V, I
C
= 1A
V
CC
= 200V, I
C
= 6A, R
L
=33.3鈩?/div>
I
B1
= 1.2A, I
B2
= -2.4A
3
3.0
0.2
8
5
5.0
1.5
V
V
MHz
碌s
碌s
Min.
Typ.
Max.
10
1
Units
碌A
mA
Thermal Characteristics
T
C
=25擄C unless otherwise noted
Symbol
R
胃jC
Characteristic
Thermal Resistance, Junction to Case
Max
2.49
Unit
擄C/
W
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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