KSC5047
KSC5047
Feature
鈥?High Current Gain
鈥?Low Collector Emitter Saturation Voltage
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
100
50
15
15
4
100
150
- 55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 50mA, I
B
= 0
V
CB
= 100V, I
E
= 0
V
EB
= 15V, I
C
= 0
V
CE
= 5V, I
C
= 5A
I
C
= 5A, I
B
= 0.12A
I
C
= 5A, I
B
= 0.12A
V
CC
= 20V, I
C
= 5A
I
B1
= - I
B2
= 0.12A
R
L
= 4鈩?/div>
0.5
2.5
0.5
40
0.5
1.2
V
V
碌s
碌s
碌s
Min.
50
Typ.
Max.
100
100
Units
V
碌A
碌A
漏2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
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