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KSC5042 Datasheet

  • KSC5042

  • High Voltage Switchihg Dynamic Focus Application

  • 4頁

  • FAIRCHILD

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KSC5042
KSC5042
High Voltage Switchihg Dynamic Focus
Application
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High Collector-Emitter Breakdown Voltage : BV
CEO
=900V
Small C
ob
=2.8pF(Typ.)
Wide S.O.A
High reliability
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
1500
900
5
100
300
10
150
- 55 ~ 150
Units
V
V
V
mA
mA
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Output Capacitance
Test Condition
I
C
=1mA, I
E
= 0
I
C
=5mA, I
B
= 0
I
E
=1mA, I
C
= 0
V
CB
=900V, I
E
= 0
V
EB
=4V, I
C
= 0
V
CE
=5V, I
C
= 10mA
I
C
=20mA, I
B
= 4mA
I
C
=20mA, I
B
= 4mA
V
CB
=100V, f = 1MHz
2.8
30
5
2
V
V
pF
Min.
1500
900
5
10
10
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
* Pulse test: PW = 300碌s, Duty Cycle = 2% pulsed
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001

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