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KSC5039F Datasheet

  • KSC5039F

  • High Voltage Power Switch Switching Application

  • 5頁

  • FAIRCHILD

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KSC5039F
KSC5039F
High Voltage Power Switch Switching
Application
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
800
400
7
5
10
3
30
150
-65 ~ 150
Units
V
V
V
A
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
C
= 1mA, I
C
= 0
V
CB
= 500V, I
E
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 5V, I
C
= 0.3A
I
C
= 2.5A, I
B
= 0.5A
I
C
= 2.5A, I
B
= 0.5A
V
CE
= 5V, I
C
= 0.1A
V
CB
= 10V , f = 1MHz
V
CC
=150V , I
C
= 2.5A,
I
B1
= -I
B2
= 0.5A
R
L
= 60鈩?/div>
10
40
1
3
0.8
10
1.5
2.0
V
V
MHz
pF
碌s
碌s
碌s
Min.
800
400
7
10
10
碌A(chǔ)
碌A(chǔ)
Typ.
Max.
Units
V
V
* Plus test: PW=300碌s, Duty Cycle=2% Pulsed
漏2000 Fairchild Semiconductor International
Rev. A, February 2000

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