鈥?/div>
Low Collector-Emitter Saturation Voltage
High speed Switching : t
F
=1碌s (Max.) @ I
C
=0.8A
Collector-Emitter Voltage : V
CEO
=400V
Lead formed for Surface Mount Applications (D-PAK, 鈥?-D 鈥?Suffix)
1
I-PAK
1. Base 2. Collector 3. Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
500
400
7
2
0.5
20
1
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 10mA, I
B
= 0
V
CB
= 400V, I
E
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 1A
I
C
= 1A, I
B
= 0.2A
I
C
= 1A, I
B
= 0.2A
V
CC
= 200V, I
C
= 0.8A
1
B1
= -I
B2
= 0.08A
R
L
= 250鈩?/div>
20
8
1
1.5
1
2.5
1
V
V
碌s
碌s
碌s
Min.
500
400
100
1
Max.
Units
V
V
碌A(chǔ)
mA
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
1
2
3
4
