KSC2982
KSC2982
Strobe Flash & Medium Power Amplifier
鈥?Excellent h
FE
Linearity : h
FE1
=140 ~ 600
鈥?Low Collector-Emitter Saturation Voltage : V
CE
(sat)=0.5V
鈥?Collector Dissipation : P
C
=1~2W in Mounted on Ceramic Board
1
SOT-89
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
P
C
*
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
* Base Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
30
30
10
6
2
4
0.4
0.8
500
1,000
150
-55 ~ 150
Units
V
V
V
V
A
A
A
A
mW
mW
擄C
擄C
* PW鈮?0ms, Duty Cycle鈮?0%
Mounted on Ceramic Board (250mm
2
x0.8mm)
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=30V, I
E
=0
V
BE
=6V, I
C
=0
V
CE
=1V, I
C
=0.5A
V
CE
=1V, I
C
=2A
I
C
=2A, I
B
=50mA
V
CE
=1V, I
C
=2A
V
CE
=1V, I
C
=2A
V
CB
=10V, I
E
=0, f=1MHz
140
70
140
0.2
0.86
150
27
0.5
1.5
V
V
MHz
pF
Min.
10
6
100
100
600
Typ.
Max.
Units
V
V
nA
nA
C
ob
h
FE1
Classification
Classification
h
FE1
A
140 ~ 240
B
200 ~ 330
C
300 ~ 450
D
420 ~ 600
Marking
SSX
h
FE
grade
漏2003 Fairchild Semiconductor Corporation
Rev. A3, February 2003
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