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KSC2883 Datasheet

  • KSC2883

  • Low Frequency Power Amplifier

  • 5頁

  • FAIRCHILD

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KSC2883
KSC2883
Low Frequency Power Amplifier
鈥?3W Output Application
鈥?Collector Dissipation : P
C
=1~2W in Mounted on Ceramic Board
鈥?Complement to KSA1203
1
SOT-89
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
*
T
J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Parameter
Value
30
30
5
1.5
0.3
500
1,000
150
-55 ~ 150
Units
V
V
V
A
A
mW
mW
擄C
擄C
Storage Temperature
T
STG
* Mounted on Ceramic Board (250mm
2
x0.8mm)
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=10碌A(chǔ), I
B
=0
I
E
=1mA, I
C
=0
V
CB
=30V, I
E
=0
V
BE
=5V, I
C
=0
V
CE
=2V, I
C
=500mA
I
C
=1.5A, I
B
=30mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=500mA
V
CB
=10V, I
E
=0, f=1MHz
120
40
100
Min.
30
5
100
100
320
2.0
1.0
V
V
MHz
pF
Typ.
Max.
Units
V
V
nA
nA
C
ob
h
FE
Classification
Classification
h
FE
O
100 ~ 200
Marking
Y
160 ~ 320
SHX
h
FE
grade
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002

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