KSC2335F
KSC2335F
High Speed, High Voltage Switching
鈥?Industrial Use
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
1
TO-220F
2.Collector
3.Emitter
1.Base
Value
500
400
7
7
15
3.5
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
擄C
擄C
* PW鈮?00碌s, Duty Cycle鈮?0%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
V
CEX
(sus)1
V
CEX
(sus)2
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
=3A, I
B1
=0.6A, L = 1mH
I
C
=3A,I
B1
=-I
B2
=0.6A
V
BE
(off)=-5V, L = 180碌H, Clamped
I
C
=6A, I
B1
=2A, I
B2
=-0.6A
V
BE
(off)=-5V, L = 180碌H, Clamped
V
CE
=400V, I
E
= 0
V
CE
=400V, R
BE
= 51鈩?@
T
C
= 125擄C
V
CE
=400V, V
BE
(off) = -1.5V
V
CE
=400V, V
BE
(off) = -1.5V @
T
a
=125擄C
V
EB
=5V, I
C
= 0
V
CE
=5V, I
C
= 0.1A
V
CE
=5V, I
C
= 1A
V
CE
=5V, I
C
=3A
I
C
=3A, I
B
=0.6A
I
C
=3A, I
B
=0.6A
V
CC
=150V, I
C
=3A
I
B1
=-I
B2
=0.6A
R
L
=50鈩?/div>
20
20
10
Min.
400
450
400
10
1
10
1
10
80
1
1.2
1
2.5
1
V
V
碌s
碌s
碌s
Max.
Units
V
V
V
碌A(chǔ)
mA
碌A(chǔ)
mA
碌A(chǔ)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
* Pulse Test: PW鈮?50碌s, Duty Cycle鈮?% Pulsed
h
FE
Classification
Classification
h
FE1
漏2000 Fairchild Semiconductor International
R
20 ~ 40
O
30 ~ 60
Y
40 ~ 80
Rev. A, February 2000
1
2
3
