KSC2001
KSC2001
General Purpose Applications
鈥?High h
FE
and Low V
CE
(sat)
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
30
25
5
700
150
600
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
V
BE
(on)
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
Parameter
* Base Emitter On Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Test Condition
V
CE
=6V, I
C
=10mA
V
CB
=30V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=700mA
I
C
=700mA, I
B
=70mA
I
C
=700mA, I
B
=70mA
V
CB
=6V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=10mA
50
90
50
200
140
0.2
0.95
13
170
Min.
600
Typ.
640
Max.
700
100
100
400
0.6
1.2
25
V
V
pF
MHz
Units
mV
nA
nA
* Pulse test: PW鈮?50碌s, Duty cycle鈮?%
h
FE
Classification
Classification
h
FE1
O
90 ~ 180
Y
135 ~ 270
G
200 ~ 400
漏2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1
2
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