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KSB907 Datasheet

  • KSB907

  • Power Amplifier Applications

  • 4頁(yè)

  • FAIRCHILD

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KSB907
KSB907
Power Amplifier Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
High DC Current Gain
Low Collector-Emitter Saturation Voltage
Built-in Damper Diode at E-C
Darlington TR
Complement to KSD1222
1
I-PACK
1. Base 2. Collector 3. Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
- 60
- 40
-5
-3
- 0.3
15
1
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector- Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= - 25mA, I
B
= 0
V
CB
= - 60V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 1A
V
CE
= - 2V, I
C
= - 3A
I
C
= - 2A, I
B
= - 4mA
I
C
= - 2A, I
B
= - 4mA
V
CC
= - 30V, I
C
= - 3A
I
B1
= - I
B2
= - 6mA
R
L
= 10鈩?/div>
0.3
0.6
0.25
2000
1000
- 1.5
-2
V
V
碌s
碌s
碌s
Min.
- 40
Typ.
Max.
- 20
- 2.5
Units
V
碌A(chǔ)
碌A(chǔ)
漏2000 Fairchild Semiconductor International
Rev. A, February 2000

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