KSB906
KSB906
Low Frequency Power Amplifier
鈥?Low Collector- Emitter Saturation Voltage
鈥?Complement to KSD1221
1
I-PAK
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
- 60
- 60
-7
-3
- 0.5
20
1
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= - 50mA, I
B
= 0
V
CB
= - 60V, I
E
= 0
V
EB
= - 7V, I
C
= 0
V
CE
= - 5V, I
C
= - 0.5A
V
CE
= - 5V, I
C
= - 3A
I
C
= - 3A, I
B
= - 0.3A
V
CE
= - 5V, I
C
= - 0.1A
V
CE
= - 5V, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
V
CC
= -30V, I
C
= - 1A
I
B1
= - I
B2
= - 0.2A
R
L
= 30鈩?/div>
60
20
-1
-1
9
150
0.4
1.7
0.5
Min.
- 60
Typ.
Max.
- 100
- 100
200
- 1.7
- 1.5
V
V
MHz
pF
碌s
碌s
碌s
Units
V
碌A(chǔ)
碌A(chǔ)
h
FE
Classification
Classification
h
FE
O
60 ~ 120
Y
100 ~ 200
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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