KSB834
KSB834
Low Frequency Power Amplifier
鈥?Complement to KSD880
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
- 60
- 60
-7
-3
- 0.5
30
1.5
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
BV
CEO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
t
ON
T
STG
t
F
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Test Condition
V
CB
= - 60V, I
E
= 0
V
EB
= - 7V, I
C
= 0
I
C
= - 50mA, I
B
= 0
V
CE
= - 5V, I
C
= - 0.5A
V
CE
= - 5V, I
C
= - 3A
I
C
= - 3A, I
B
= - 0.3A
V
CE
= - 5V, I
C
= - 0.5A
V
CE
= - 5V, I
C
= - 0.5A
V
CB
= - 10V, I
E
= 0
f = 1MHz
V
CC
= -30V, I
C
= - 1A
I
B1
= - I
B2
= - 0.2A
R
L
= 30鈩?/div>
- 60
60
20
- 0.5
- 0.7
9
150
0.4
1.7
0.5
200
-1
-1
V
V
MHz
pF
碌s
碌s
碌s
Min.
Typ.
Max.
- 100
- 100
Units
碌A(chǔ)
碌A(chǔ)
V
h
FE
Classification
Classification
h
FE1
O
60 ~ 120
Y
100 ~ 200
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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