KSB810
KSB810
Audio Frequency Amplifier
鈥?Complement to KSD1020
1
TO-92S
1.Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-30
-25
-5.0
-700
-1.0
350
150
-55 ~ 150
Units
V
V
V
mA
A
mW
擄C
擄C
*
PW鈮?0ms, Duty cycle鈮?0%
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
(on)
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Base-Emitter on Voltage
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Test Condition
V
CB
= -30V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -700mA
V
CE
= -6V, I
C
= -10mA
I
C
= -700mA, I
B
= -70mA
I
C
= -700mA, I
B
= -70mA
V
CB
= -6V, I
E
=0, f=1MHz
V
CE
= -6V, I
C
=-10mA
50
70
35
-600
200
100
-640
-0.25
-0.95
17
160
Min.
Typ.
Max.
-100
-100
400
-700
-0.4
-1.2
40
mV
V
V
pF
MHz
Units
nA
nA
* Pulse Test: PW鈮?50碌s, Duty cycle鈮?%
h
FE
Classification
Classification
h
FE1
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001