KSB798
KSB798
Audio Frequency Power Amplifier
鈥?Collector Current : I
C
= -1A
鈥?Collector Power Dissipation : P
C
= 2W
1
SOT-89
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
1. Base 2. Collector 3. Emitter
Ratings
-30
-25
-5
-1.0
-1.5
2.0
150
-55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
* PW鈮?0ms, Duty cycle鈮?0%
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -100碌A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100碌A, I
C
=0
V
CB
= -30V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -1V, I
C
= -0.1A
V
CE
= -1V, I
C
= -1.0A
I
C
= -1.0A, I
B
= -0.1A
I
C
= -1.0A, I
B
= -0.1A
V
CE
= -6V, I
C
= -10mA
V
CE
= -6V, I
C
= -10mA
V
CB
= -6V, I
E
=0, f=1MHz
-0.6
110
18
90
50
Min.
-30
-25
-5
-0.1
-0.1
400
-0.4
-1.2
-0.7
V
V
V
MHz
pF
Typ.
Max.
Units
V
V
V
碌A
碌A
h
FE
Classification
Classification
h
FE1
O
90 ~ 180
Marking
Y
135 ~ 270
G
200 ~ 400
SLX
h
FE
Grade
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
1
2
3
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