KSB601
KSB601
Low Frequency Power Amplifier
鈥?Medium Speed Switching Industrial Use
鈥?Complement to KSD560
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
- 100
- 100
-7
-5
-8
- 0.5
1.5
30
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
擄C
擄C
* PW鈮?0ms, Duty Cycle鈮?0%
漏2000 Fairchild Semiconductor International
Rev. A, February 2000