鈥?/div>
Low Collector-Emitter Saturation Voltage
Large Collector Current
High Power Dissipation : P
C
=1.3W (T
a
=25擄C)
Complement to KSD 1691
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
* PW鈮?0ms, Duty Cycle鈮?0%
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25擄C)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
- 60
- 60
-7
-5
-8
-1
1.3
20
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
V
CB
= - 50V, I
E
= 0
V
EB
= - 7V, I
C
= 0
V
CE
= - 1V, I
C
= - 0.1A
V
CE
= - 1V, I
C
= - 2A
V
CE
= - 2V, I
C
= - 5A
I
C
= - 2A, I
B
= - 0.2A
I
C
= - 2A, I
B
= - 0.2A
V
CC
= - 10V, I
C
= - 2A
I
B1
= - I
B2
=0.2A
RL = 5鈩?/div>
60
100
50
200
- 0.14
- 0.9
0.15
0.78
0.18
Min.
Typ.
Max.
- 10
- 10
400
- 0.3
- 1.2
1
2.5
1
V
V
碌s
碌s
碌s
Units
碌A
碌A
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn On Time
Storage Time
Fall Time
* Pulse test: PW鈮?50碌s, Duty Cycle鈮?% Pulsed
h
FE
Classification
Classification
h
FE2
O
100 ~ 200
Y
160 ~ 320
G
200 ~ 400
漏2003 Fairchild Semiconductor Corporation
Rev. B, May 2003
1
2
3
4
5
