鈥?/div>
Low Collector-Emitter Saturation Voltage
Large Current Capacity and Wide SOA
Fast Switching Speed
Complement to KSD1621
1
SOT-89
1. Base 2. Collector 3. Emitter
PNP Epitaxial Planar Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
*
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-30
-25
-6
-2
500
1.3
150
-55 ~ 150
Units
V
V
V
A
mW
W
擄C
擄C
* Mounted on Ceramic Board (250mm2 x 0.8mm)
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
* Turn On Time
* Storage Time
* Fall time
Test Condition
I
C
= -10碌A(chǔ), I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10碌A(chǔ), I
C
= 0
V
CB
= -20V, I
E
=0
V
BE
= -4V, I
C
= 0
V
CE
= -2V, I
C
= -0.1A
V
CE
= -2V, I
C
= -1.5A
I
C
= -1.5A, I
B
= -75mA
I
C
= -1.5A, I
B
= -75mA
V
CE
= -10V, I
C
= -50mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CC
= -12V, V
BE
= -5V
I
B1
=-I
B2
=-25mA
I
C
= -500mA, R
L
=24鈩?/div>
100
65
-0.35
-0.85
150
32
60
350
25
Min.
-30
-25
-6
-100
-100
560
-0.6
-1.2
V
V
MHz
pF
ns
ns
ns
Typ.
Max.
Units
V
V
V
nA
nA
* Pulse Test: PW鈮?0碌s, Duty Cycle鈮?%
h
FE
Classification
Classification
h
FE1
R
100 ~ 200
Marking
S
140 ~ 280
T
200 ~ 400
U
280 ~ 560
SZX
h
FE
Grade
漏2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
1
2
3
4
