KSB1017
KSB1017
Power Amplifier Applications
鈥?Complement to KSD1408
1
TO-220F
2.Collector
3.Emitter
1.Base
PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation ( T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
- 80
- 80
-5
-4
- 0.4
25
150
- 55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= - 50mA, I
B
= 0
V
CB
= - 80V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 5V, I
C
= - 0.5A
V
CE
= - 5V, I
C
= - 3A
I
C
= - 3A, I
B
= - 0.3A
V
CE
= - 5V, I
C
= - 3A
V
CE
= - 5V, I
C
= - 0.5A
V
CB
= - 10V, f = 1MHz
40
15
-1
-1
9
130
Min.
-80
Typ.
Max.
- 30
- 100
240
- 1.7
- 1.5
V
V
MHz
pF
Units
V
碌A
碌A
h
FE
Classification
Classification
h
FE1
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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