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KSA812

Low Frequency Amplifier

鈥?Collector-Base Voltage : V

CBO

= -60V

鈥?Complement to KSC1623

3

2

1

SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Parameter

Ratings

-60

-50

-5

-100

150

-55 ~ 150

Units

V

mA

mW

擄C

Electrical Characteristics

T

a

=25擄C unless otherwise noted

Symbol

I

CBO

I

EBO

h

FE

V

CE

(sat)

V

BE

(on)

f

T

C

ob

Parameter

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

Test Condition

V

CB

= -60V, I

E

=0

V

EB

= -5V, I

C

=0

V

CE

= -6V, I

C

= -1mA

I

C

= -100mA, I

B

= -10mA

V

CE

= -6V, I

C

= -1mA

V

CE

= -6V, I

C

= -10mA

V

CB

= -10V, I

E

=0, f=1MHz

-0.55

90

200

-0.18

-0.62

180

4.5

Min.

Typ.

Max.

-0.1

600

-0.3

-0.65

V

MHz

pF

Units

碌A(chǔ)

h

FE

Classification

h

FE

O

90 ~ 180

Marking

Y

135 ~ 270

G

200 ~ 400

L

300 ~ 600

D1 O

h

FE

grade

漏2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

型號

版本

描述

廠商

下載
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